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SMD Type
Silicon PNP Epitaxial Planar Type 2SB1574
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics.
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC.
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -50 -50 -5 -2 -3 10 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff curent Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 iA, IE = 0 IC = -1 mA, IB = 0 IE = -10 iA, IC = 0 VCB = -10 V,IE = 0 VCE = -2 V, IC = -200 mA VCE = -2 V, IC = -1A VCE(sat) IC = -1 A, IB = -50 mA VBE(sat) IC = -1 A, IB = -50 mA fT Cob VCE = -10 V, IC = -50 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz 120 60 -0.2 -0.85 80 45 60 -0.3 -1.2 V V MHz pF Min -50 -50 -5 -0.1 340 Typ Max Unit V V V iA V
hFE Classification
Rank hFE R 120 240 S 170 340
3.80
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